STGSB200M65DF2AG
Automotive-grade trench gate field-stop, 650 V, 200 A low-loss M series IGBT in an ACEPACK SMIT package
ACEPACK SMIT封裝中的汽車級溝槽柵極場阻，650 V，200 A低損耗M系列IGBT
產(chǎn)品概述
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Thanks to the DBC substrate, the ACEPACK SMIT surface mounting power package offers a low thermal resistance coupled with a electrical isolated top side thermal pad.
該器件是一種IGBT，采用先進(jìn)的專有溝槽柵極場阻結(jié)構(gòu)。該設(shè)備是M系列IGBT的一部分，代表了逆變器系統(tǒng)性能和效率之間的最佳平衡，其中低損耗和短路功能至關(guān)重要。此外，正的VCE（sat）溫度系數(shù)和緊密的參數(shù)分布使并聯(lián)運行更安全。得益于DBC基板，ACEPACK SMIT表面安裝電源包提供了一個低熱阻，并配有一個電氣隔離的頂部散熱片。
所有功能：
AEC-Q101 qualified
6 μs of minimum short-circuit withstand time
VCE(sat) = 1.65 V (typ.) @ IC = 200 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Maximum junction temperature: TJ = 175 °C
Dice on direct bond copper (DBC) substrate
Isolation rating of 3400 Vrms/min
UL recognition: UL 1557 file E81734
AEC-Q101合格
6μs的最小短路耐受時間
VCE（sat）=1.65 V（典型值）@IC=200 A
緊參數(shù)分布
正VCE（sat）溫度系數(shù)
低熱阻
最高結(jié)溫：TJ=175°C
直接鍵合銅（DBC）襯底上的骰子
隔離等級為3400 Vrms/min
UL識別：UL 1557文件E81734
